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High Mobility MoS <sub>2</sub> Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer
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High Mobility MoS 2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer
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Shared by
NobleBlocks
on Jul 8, 2016 • 12:00 AM UTC
Authors:
Jingli Wang
,
Qian Yao
,
Chun‐Wei Huang
+9 more
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High Mobility MoS <sub>2</sub> Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer | NobleBlocks
