How far will silicon nanocrystals push the scaling limits of NVMs technologies?

De Salvo, B.; Gerardi, C.; Lombardo, S.; Baron, T.; Perniola, L.; Mariolle, D.; Mur, P.; Toffoli, A.; Gély, M.; Séméria, M.N.; Deleonibus, S.; Ammendola, G.; Ancarani, Valentina; Melanotte, M.; Bez, R.; Baldi, L.; Corso, D.; Crupi, I.; A. Puglisi, Rosaria; Nicotra, Giuseppe; Rimini, E.; Mazen, F.; Ghibaudo, G.; Pananakakis, G.; Monzio Compagnoni, Christian; Ielmini, Daniele; L. Lacaita, Andrea; S. Spinelli, Alessandro; Wan, Yating; van der Jeugd, K.

doi:10.1109/iedm.2003.1269352

Public

How far will silicon nanocrystals push the scaling limits of NVMs technologies?

Published • Mar 22, 2004

Authors:

B. De Salvo

C. Gerardi

S. Lombardo

Abstract

For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretic...

Subject

Non-volatile memory

Nanocrystal

Scaling

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