A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Trentzsch, Martin; Flachowsky, S.; P. Richter, Ralf; Paul, J.; Reimer, Benjamin; Utess, Dirk; Jansen, Sören; Mulaosmanovic, Halid; Müller, Stefan; Slesazeck, Stefan; Ocker, J.; Noack, Marko; Müller, Johannes; Polakowski, P.; Schreiter, Jörg; Beyer, Sebastian; Mikolajick, Thomas; Rice, B.

doi:10.1109/iedm.2016.7838397

Public

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Published • Dec 1, 2016

Authors:

Martin Trentzsch

S. Flachowsky

Ralf P. Richter

Abstract

We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTA...

Subject

Ferroelectricity

CMOS

Transistor

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