Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

Nail, Cécile; Molas, G.; Blaise, P.; Piccolboni, G.; Sklénard, B.; Cagli, C.; Bernard, M.; Roule, A.; Azzaz, M.; Vianello, Elisa; Carabasse, C.; Berthier, R.; James Cooper, D.; Pelissier, C.; Magis, T.; Ghibaudo, G.; Vallée, C.; Bedeau, D.; Mosendz, O.; De Salvo, B.; Perniola, L.

doi:10.1109/iedm.2016.7838346

Public

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

Published • Dec 1, 2016

Authors:

Cécile Nail

G. Molas

P. Blaise

Abstract

In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 1010cycles or high 300°C retention. From first principle calculations...

Subject

Resistive random-access memory

Margin (machine learning)

Window (computing)

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