Excitonic Linewidth Approaching the Homogeneous Limit in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>-Based van der Waals Heterostructures

Cadiz, Fabian; Courtade, Emmanuel; Robert, Cédric; Wang, Gang; Shen, Yuxia; Cai, H.; Taniguchi, Takashi; Watanabe, Kenji; Carrère, H.; Lagarde, Delphine; Manca, Marco; Amand, T.; Renucci, P.; Tongay, Sefaattin; Marie, X.; Urbaszek, Bernhard

doi:10.1103/physrevx.7.021026

Public

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

Published in Physical Review X • May 18, 2017

Authors:

Fabian Cadiz

Emmanuel Courtade

Cédric Robert

Abstract

Transition-metal dichalcogenides are a class of two-dimensional materials that offer potential for developing flat and flexible transistors and optoelectronics, but their quality is often hindered by traditional methods for depositing these atomically flat materials. An experiment demonstrates a new...

Subject

Laser linewidth

Exciton

Photoluminescence

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