Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

Idzdihar Idris, Muhammad; Hung Weng, Ming; Khee Chan, Hua; Murphy, A.E.; A. Smith, Dave; Young, R.A.R.; P. Ramsay, Ewan; Clark, David; G. Wright, Nick; B. Horsfall, Alton

doi:10.4028/www.scientific.net/msf.897.513

Public

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

Published in Materials science forum • May 15, 2017

Authors:

Muhammad Idzdihar Idris

Ming Hung Weng

Hua Khee Chan

Abstract

Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or more commonly NMOS) and there is a lack of a comprehen...

Subject

PMOS logic

NMOS logic

Materials science

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