Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS 2 . FETs with channel ... View More