Graphene‐Contacted Ultrashort Channel Monolayer MoS<sub>2</sub> Transistors

Li, Xie; Liao, Mengzhou; Wang, Shuopei; Yu, Hua; Du, Luojun; Tang, Jian; Zhao, Jing; Zhang, Jing; Chen, Peng; Lu, Xiaobo; Wang, Guole; Xie, Guibai; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

doi:10.1002/adma.201702522

Public

Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors

Published in Advanced Materials • Jul 28, 2017

Authors:

Xie Li

Mengzhou Liao

Shuopei Wang

Abstract

2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS 2 . FETs with channel ...

Subject

Materials science

Graphene

Monolayer

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