Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

Loubet, N.; B. Hook, Terence; Montanini, P.; Wing Yeung, Chun; Kanakasabapathy, S.; Guillom, M.; Yamashita, T.; Zhang, J.; Miao, Xiren; Wang, J.; Young, Anthony; Chao, R.; Kang, Mingu; Liu, Zhe; Fan, S.; Hamieh, Bassem; Sieg, Stuart; Mignot, Yann; Xu, Wenyu; Seo, Soon‐Cheon; Yoo, J.; Mochizuki, Shinichi; Sankarapandian, M.; Kwon, Oh-Hoon; Carr, Adra; Greene, Andrew; Park, Y.; Frougier, Julien; Galatage, Rohit; Bao, R.; C. Shearer, Jeffrey; M. Conti, Rena; Song, Hyo‐Jong; Lee, Dae‐Young; Kong, Dexin; Xu, Yang; Arceo, Abraham; Bi, Zhichun; Xu, P.; Muthinti, Raja; Li, J.; Wong, Robert; Brown, D.E.; Oldiges, Phil; R. Robison, Robert; Arnold, John; Felix, Nelson; Skordas, Spyridon; G. Gaudiello, John; Standaert, T.; Jagannathan, H.; Corliss, Dan; Na, M.-H.; Knorr, Andreas; Wu, Tian‐Li; Gupta, Divya; Lian, S.; Divakaruni, R.; R. Gow, T.; B. Labelle, Catherine; Lee, S.; Paruchuri, Vamsi; Bu, H.; Khare, Mukesh

doi:10.23919/vlsit.2017.7998183

Public

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

Published • Jun 1, 2017

Authors:

N. Loubet

Terence B. Hook

P. Montanini

Abstract

In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased Weffper active footprint and better performance compared to FinFET, and wi...

Subject

Nanosheet

Metal gate

Materials science

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