Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

Loubet, N.; B. Hook, Terence; Montanini, P.; Wing Yeung, Chun; Kanakasabapathy, S.; Guillom, M.; Yamashita, T.; Zhang, J.; Miao, Xiren; Wang, J.; Young, Anthony; Chao, R.; Kang, Mingu; Liu, Zhe; Fan, S.; Hamieh, Bassem; Sieg, Stuart; Mignot, Yann; Xu, Wenyu; Seo, Soon‐Cheon; Yoo, J.; Mochizuki, Shinichi; Sankarapandian, M.; Kwon, Oh-Hoon; Carr, Adra; Greene, Andrew; Park, Y.; Frougier, Julien; Galatage, Rohit; Bao, R.; C. Shearer, Jeffrey; M. Conti, Rena; Song, Hyo‐Jong; Lee, Dae‐Young; Kong, Dexin; Xu, Yang; Arceo, Abraham; Bi, Zhichun; Xu, P.; Muthinti, Raja; Li, J.; Wong, Robert; Brown, D.E.; Oldiges, Phil; R. Robison, Robert; Arnold, John; Felix, Nelson; Skordas, Spyridon; G. Gaudiello, John; Standaert, T.; Jagannathan, H.; Corliss, Dan; Na, M.-H.; Knorr, Andreas; Wu, Tian‐Li; Gupta, Divya; Lian, S.; Divakaruni, R.; R. Gow, T.; B. Labelle, Catherine; Lee, S.; Paruchuri, Vamsi; Bu, H.; Khare, Mukesh

doi:10.23919/vlsit.2017.7998183

Public

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

Published • Jun 1, 2017

Authors:

N. Loubet

Terence B. Hook

P. Montanini

Abstract

In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased W eff per active footprint and better performance compared to FinFET, and ...

Subject

Nanosheet

Metal gate

Materials science

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