Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

Liu, Chuan; Li, Gongtan; Di Pietro, Riccardo; Huang, Jie; Noh, Yong‐Young; Liu, Xuying; Minari, Takeo

doi:10.1103/physrevapplied.8.034020

Public

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

Published in Physical Review Applied • Sep 22, 2017

Authors:

Chuan Liu

Gongtan Li

Riccardo Di Pietro

Abstract

Cutting-edge field-effect and thin-film transistors (FETs and TFTs) reportedly offer very high carrier mobilities, but the reliability of these values is controversial. This study reveals the complicated evolution of band bending and actual carrier concentrations in three-terminal devices with non-O...

Subject

Ohmic contact

Materials science

Enhanced Data Rates for GSM Evolution

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!