Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime

Abstract We characterized intrinsic deep level defects created in ion collision cascades which were produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions into n -type 4H-SiC epitaxial layers using a fast-scanning reduced-rate ion microbeam. The initial deep level tra... View More