Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence

Chen, Hung-Ling; Himwas, Chalermchai; Scaccabarozzi, Andrea; Râle, Pierre; Oehler, Fabrice; Lemaı̂tre, A.; Lombez, Laurent; Guillemoles, Jean‐François; Tchernycheva, Maria; Harmand, Jean‐Christophe; Cattoni, Andréa; Collin, Stéphane

doi:10.1021/acs.nanolett.7b02620

Public

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence

Published in Nano Letters • Oct 16, 2017

Authors:

Hung-Ling Chen

Chalermchai Himwas

Andrea Scaccabarozzi

Abstract

We present an effective method of determining the doping level in n-type III–V semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift to higher energy (Burstein–Moss shift) and ...

Subject

Cathodoluminescence

Doping

Nanowire

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