Epitaxial growth of γ -InSe and α , β , and γ -In 2 Se 3 on ε -GaSe

We demonstrate that -InSe and the , and phases of In 2 Se 3 can be grown epitaxially on -GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of In x Se y depending on the position of the su... View More