Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

Grossi, Alessandro; Pérez, Eduardo; Zambelli, Cristian; Olivo, P.; Miranda, E.; Roelofs, Robin; Woodruff, Jacob; I. Räisänen, Petri; Li, Wei; Givens, Michael; Costina, I.; Andreas Schubert, Markus; Wenger, Christian

doi:10.1038/s41598-018-29548-7

Public

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

Published in Scientific Reports • Jul 18, 2018

Authors:

Alessandro Grossi

Eduardo Pérez

Cristian Zambelli

Abstract

Abstract The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their m...

Subject

Resistive random-access memory

Reliability (semiconductor)

Process (computing)

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