Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi <sub>2</sub> O <sub>2</sub> Se

Chen, Cheng; Wang, Meixiao; Wu, Jinxiong; Fu, Huixia; Yang, Haifeng; Tian, Zhen; Tu, Teng; Peng, Han; Peng, Han; Sun, Yan; Xu, Xiang; Jiang, Juan; B. M. Schröter, Niels; Li, Yiwei; Pei, Ding; Liu, Shuai; Adhitia Ekahana, Sandy; Yuan, Hongtao; Xue, Jiamin; Li, Gang; Jia, Jinfeng; Liu, Zhongkai; Yan, Binghai; Peng, Hailin; Peng, Hailin; Chen, Yulin

doi:10.1126/sciadv.aat8355

Public

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se

Published in Science Advances • Sep 7, 2018

Authors:

Cheng Chen

Meixiao Wang

Jinxiong Wu

Abstract

Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

Subject

Semiconductor

Band gap

Materials science

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