Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Sue Lee, Joon; Choi, Sukgeun; Pendharkar, Mihir; J. Pennachio, Daniel; Markman, Brian; Seas, Michael; Koelling, Sebastian; A. Verheijen, Marcel; Casparis, Lucas; D. Petersson, K.; Petković, Ivana; Schaller, Vanessa; Rodwell, M.J.W.; M. Marcus, C.; Krogstrup, Peter; P. Kouwenhoven, Leo; P. A. M. Bakkers, Erik; J. Palmstrøm, C.

doi:10.1103/physrevmaterials.3.084606

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Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Published in Physical Review Materials • Aug 26, 2019

Authors:

Joon Sue Lee

Sukgeun Choi

Mihir Pendharkar

Abstract

One-dimensional semiconductors with strong spin-orbit coupling have recently gained much attention in the fields of Majorana zero modes and topological quantum computing. The current focus lies on realizing braiding and topological qubits, which require complex nanowire (NW) networks. The authors in...

Subject

Materials science

Epitaxy

Facet (psychology)

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