22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

Ong, Shao-er; Chan, L.H.K.; Wai Chew, Kok; Lim, C.K.; L. Oo, W.; Bellaouar, A.; Zhang, C.; Chow, W.H.; Chen, Tuanhai; Rassel, R.; Shuang Wong, Jen; Wan, Changhua; Kim, J.; Seet, W.H.; Harame, D.L.

doi:10.1109/rfic.2019.8701768

Public

22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

Published • Jun 1, 2019

Authors:

Shao-er Ong

L.H.K. Chan

Kok Wai Chew

Abstract

This paper addresses the impact of back-gate biasing to DC, RF/millimeter-Wave (mmWave) and high frequency (HF) noise in 22nm FD-SOI technology (GLOBALFOUNDRIES’ 22FDX® technology). The front-gate and the back-gate cut-off frequency fT, together with the maximum oscillation frequency fMAX, were extr...

Subject

Biasing

Radio frequency

Extremely high frequency

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!