22nm Fully-Depleted SOI High Frequency Noise Modeling up to 90GHz Enabling Ultra Low Noise Millimetre-Wave LNA Design

Chan, L.H.K.; Ong, Shao-er; L. Oo, W.; Wai Chew, Kok; Zhang, C.; Bellaouar, A.; Chow, W.H.; Chen, Tuanhai; Rassel, R.; Shuang Wong, Jen; Lim, C.K.; Wan, Changhua; Kim, J.; Seet, W.H.; Harame, D.L.

doi:10.1109/rfic.2019.8701875

Public

22nm Fully-Depleted SOI High Frequency Noise Modeling up to 90GHz Enabling Ultra Low Noise Millimetre-Wave LNA Design

Published • Jun 1, 2019

Authors:

L.H.K. Chan

Shao-er Ong

W. L. Oo

Abstract

This paper reports the high frequency (HF) noise characterized performance and modeling on 22nm FD-SOI technology transistor (GLOBALFOUNDRIES’ 22FDX ® technology) from 2 GHz to the maximum E-band millimetre-Wave (mmWave) frequency of 90 GHz. The measurement was performed using the Focus Microwaves n...

Subject

Infrasound

Noise (video)

Silicon on insulator

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