Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates

Abstract We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched ref... View More