Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−<i>x</i> memristors under cryogenic conditions (1.5 K)

Beilliard, Yann; Paquette, François; Brousseau, Frédéric; Ecoffey, Serge; Alibart, Fabien; Drouin, Dominique

doi:10.1063/1.5140994

Public

Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

Published in AIP Advances • Feb 1, 2020

Authors:

Yann Beilliard

François Paquette

Frédéric Brousseau

Abstract

Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature ra...

Subject

Memristor

Thermal conduction

Materials science

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