Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

Öğütman, Kortan; Iqbal, Nafis; Gregory, Geoffrey; Li, Mengjie; J. Haslinger, Michael; Cornagliotti, Emanuele; V. Schoenfeld, Winston; John, Joachim; O. Davis, Kristopher

doi:10.1002/pssa.202000348

Public

Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

Published in physica status solidi (a) • Jul 5, 2020

Authors:

Kortan Öğütman

Nafis Iqbal

Geoffrey Gregory

Abstract

Herein, tunneling aluminum oxide (Al2O3) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron‐doped surface. These very thin Al2O3 films (1.5–3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110–11...

Subject

Passivation

Materials science

Atomic layer deposition

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