Oxygen vacancy engineering of TaO <sub>x</sub> -based resistive memories by Zr doping for improved variability and synaptic behavior

Henrique Quintino Palhares, João; Beilliard, Yann; Alibart, Fabien; Bonturim, Everton; Zanetti de Florio, Daniel; C. Fonseca, Fábio; Drouin, Dominique; S. Ferlauto, André

doi:10.1088/1361-6528/ac0e67

Public

Oxygen vacancy engineering of TaO x -based resistive memories by Zr doping for improved variability and synaptic behavior

Published in Nanotechnology • Jun 24, 2021

Authors:

João Henrique Quintino Palhares

Yann Beilliard

Fabien Alibart

Abstract

Abstract Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (V O ) conduct...

Subject

Materials science

Doping

X-ray photoelectron spectroscopy

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!