Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

Abstract 2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low‐dimensional electronic, optoelectronic, and spintronic devices. Here, all‐2D van der Waals vertical spin‐valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D ... View More