Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors

Veljković, Sandra; Mitrović, Nikola; Djoric-Veljković, S.; Davidović, V.; Manić, I.; Golubović, S.; Paskaleva, A.; Spassov, D.; Prijić, Zoran; Prijić, Aneta; Stanković, S.; Danković, Danijel

doi:10.1109/miel52794.2021.9569154

Public

Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors

Published • Sep 12, 2021

Authors:

Sandra Veljković

Nikola Mitrović

S. Djoric-Veljković

Abstract

The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge...

Subject

Transistor

Irradiation

Stress (linguistics)

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