Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

Manchon, Benoît; Segantini, Greta; Baboux, Nicolas; Rojo Romeo, Pédro; Barhoumi, Rabei; C. Infante, I.; Alibart, Fabien; Drouin, Dominique; Vilquin, Bertrand; Deleruyelle, Damien

doi:10.1002/pssr.202100585

Public

Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

Published in physica status solidi (RRL) - Rapid Research Letters • Mar 10, 2022

Authors:

Benoît Manchon

Greta Segantini

Nicolas Baboux

Abstract

Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN//TiN stack deposited by reactive magnetron sputtering is investigated. The oxidation of the interfacial layer during annealing due to scavenging of the impacts both the ferroelect...

Subject

Ferroelectricity

Materials science

Tin

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