W -Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

We report the$W$-band large-signal power and efficiency performance of Ga-polar graded-channel (GC) AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 50-nm gate-length mini-field-plate (FP) T-gate. The pre-matched GC GaN HEMT devices with on-chip pre-matching networks show a peak power-add... View More