High performance La-doped HZO based ferroelectric capacitors by interfacial engineering

Popovici, M.; Bizindavyi, Jasper; Favia, Paola; Clima, Sergiu; Nur K. Alam, Md; Ramachandran, R.K.; Walke, A.; Celano, Umberto; Leonhardt, A.; Mukherjee, S.; Richard, Olivier; Illiberi, A.; Givens, Michael; Delhougne, Romain; Van Houdt, Jan; Sankar Kar, Gouri

doi:10.1109/iedm45625.2022.10019525

Public

High performance La-doped HZO based ferroelectric capacitors by interfacial engineering

Published in 2022 International Electron Devices Meeting (IEDM) • Dec 3, 2022

Authors:

M. Popovici

Jasper Bizindavyi

Paola Favia

Abstract

We show how interfacial oxide engineering in La-doped hafnium zirconate (HZO) ferroelectric (FE) capacitor stacks can be used to significantly improve the ferroelectric response and remnant polarization (PR) of the HZO. This is achieved by incorporating either a 1 nm TiO2seed and/or 2 nm Nb2O5cap la...

Subject

Ferroelectricity

Materials science

Capacitor

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