Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Shin, Wonjun; Chan Park, Eun; Koo, Ryun‐Han; Kwon, Dongseok; Kwon, Daewoong; Lee, Jong‐Ho

doi:10.1063/5.0140953

Public

Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Published in Applied Physics Letters • Apr 10, 2023

Authors:

Wonjun Shin

Eun Chan Park

Ryun‐Han Koo

Abstract

We investigate the low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors (FeTFTs) with a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. MFMIS FeTFTs are fabricated with different metal-to-FE area ratios (AM/AF's). It is revealed th...

Subject

Materials science

Ferroelectricity

Optoelectronics

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