Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On‐Chip Light Sources

Shang, Chen; T. Hughes, Eamonn; R. Begley, Matthew; Koscica, Rosalyn; Fouchier, Marc; Feng, Kaiyin; He, William; Wan, Yating; Leake, Gerald; Ludewig, Peter; E. Bowers, John

doi:10.1002/adfm.202304645

Public

Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On‐Chip Light Sources

Published in Advanced Functional Materials • Jul 8, 2023

Authors:

Chen Shang

Eamonn T. Hughes

Matthew R. Begley

Abstract

Abstract Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on‐chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in th...

Subject

Materials science

Wafer

Optoelectronics

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