Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

Exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO2−x-based memristors fabricated with a CMOS-... View More