Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Shin, Wonjun; Byeon, Junsung; Koo, Ryun‐Han; Lim, Jungmoon; Hyeon Kang, Jung; Jang, A‐Rang; Lee, Jong‐Ho; Kim, Jae‐Joon; Cha, SeungNam; Pak, Sangyeon; Lee, Sung‐Tae

doi:10.1002/advs.202307196

Public

Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Published in Advanced Science • May 21, 2024

Authors:

Wonjun Shin

Junsung Byeon

Ryun‐Han Koo

Abstract

Abstract The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternativ...

Subject

Monolayer

Materials science

van der Waals force

Research Assistant

AI chat, annotations, notes & similar papers

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!