High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric

Abstract In this work, TiO2 thin films deposited by the atomic layer deposition (ALD) method were treated with a special N2O plasma surface treatment and used as the gate dielectric for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The N2O plasma surface trea... View More