Atomic Layer Deposition-Based Ultrathin SnOx Buffer for High Passivation Quality in Silicon Heterojunction Solar Cells

Tin oxide (SnO x ) layers fabricated via atomic layer deposition (ALD) effectively serve as electron transport or sputter-resistant buffer layers in perovskite, silicon, and tandem solar cells, mitigating the interface defect density induced by transparent conductive oxide (TCO) in heterojunction (H... View More