Distinct Design for Two Terminal Crystalline Silicon Bottom-Based III–V Tandem Devices via Direct Electrode Interconnection and Enlarged Bottom Area

Aleem Zahid, Muhammad; Han, Seungyong; Hasan, S.; Ai Dao, Vinh; Minh Phuong, Nguyen; Phong Pham, Duy; Yi, Junsin

doi:10.1021/acsaem.5c01220

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Distinct Design for Two Terminal Crystalline Silicon Bottom-Based III–V Tandem Devices via Direct Electrode Interconnection and Enlarged Bottom Area

Shared by NobleBlocks on Sep 22, 2025 • 12:00 AM UTC

Authors:

Muhammad Aleem Zahid

Seungyong Han

S. Hasan

Abstract

An innovative two-terminal III–V/c-Si multijunction device is constructed using direct electrode connections and extending the bottom area to improve carrier transport and current matching between the top III–V and bottom c-Si devices. A commercial triple junction GaInP2/InGaAs/Ge top cell (1 cm2) w...

Subject

Materials science

Tandem

Optoelectronics

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