Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors

Walwil, Husam; Malakoutian, Mohamadali; Shoemaker, Daniel; Woo, Kelly; Soman, Rohith; Lyu, Junrui; M. Chumbes, Eduardo; T. Dejarld, Matthew; Tahhan, Maher; LaRoche, Jeffrey; Chowdhury, Srabanti; Choi, Sukwon

doi:10.1021/acsami.5c13149

Public

Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors

Published in ACS Applied Materials & Interfaces • Oct 20, 2025

Authors:

Husam Walwil

Mohamadali Malakoutian

Daniel Shoemaker

Abstract

High Resolution Image Download MS PowerPoint Slide AlGaN/GaN high electron mobility transistors (HEMTs) are critical components in modern radio frequency (RF) power amplifiers. However, commercial AlGaN/GaN HEMTs often require power derating to maintain safe channel temperatures. Deposition of a pol...

Subject

Materials science

Diamond

Thermal conductivity

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