Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors

AlGaN/GaN high electron mobility transistors (HEMTs) are critical components in modern radio frequency (RF) power amplifiers. However, commercial AlGaN/GaN HEMTs often require power derating to maintain safe channel temperatures. Deposition of a polycrystalline diamond heat spreader onto an as-fabri... View More