Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping
Published in arXiv (Cornell University) • Mar 24, 2026
Authors:,,
C. W. Cheng
J. Smith
K. Mashooq
Abstract
A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel...
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